HiPerDynFREDTM
Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
Notes: Data given for TVJ
= 25
OC and per diode unless otherwise specified
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low IRM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IFAV
VRRM
= 600 V
trr
= 35 ns
= 2x10 A
VRSM
VRRM
Type
V V
600 600 DSEC16-06AC
Symbol
Conditions Maximum Ratings
IFRMS
IFAVM
35 A
TC
= 85°C; rectangular, d = 0.5 10 A
IFSM
TVJ
= 45°C; t
p
= 10 ms (50 Hz), sine 50 A
EAS
TVJ
= 25°C; non-repetitive 0.1 mJ
IAS
= 0.9 A; L = 180 μH
IAR
VA
= 1.5
·VR typ.; f = 10 kHz; repetitive 0.1 A
TVJ
TVJM
Tstg
-55...+175 °C
175 °C
-55...+150 °C
Ptot
TC
= 25°C 50 W
VISOL
50/60 Hz RMS; IISOL
1 mA 2500 V~
FC
mounting force with clip 20...120 N
Weight
typical 3 g
Symbol
Conditions Characteristic Values
typ.
max.
IR
TVJ
= 25°C V
R
= VRRM
TVJ
= 150°C V
R
= VRRM
60 μA
0.25 mA
VF
IF
= 10 A; T
VJ
= 125°C 1.42 V
TVJ
= 25°C 2.10 V
RthJC
RthCH
3 K/W
0.4 K/W
trr
IF
= 1 A; -di/dt = 50 A/μs; 35 ns
VR
= 30 V; T
VJ
= 25°C
IRM
VR
= 100 V; I
F
= 12 A; -di
F/dt = 100 A/μs 4.4 A
TVJ
= 100°C
? 2000 IXYS All rights reserved
DSEC16-06AC
ADVANCE TECHNICAL INFORMATION
* Patent pending
ISOPLUS220TM
23
Isolated back surface *
1
1 2
3
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